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ROMANOV, Aleksei E.
Doctor of Science at Institute of Strength Physics and Materials Science of Siberian Branch Russian Academy of Sciences (ISPMS SB RAS); 1989
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Research interests |
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Micro- and nanomechanics of disclinations in solids
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Mesoscopic models of plastic deformation and fracture
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Physical and mechanical properties of amorphous, nanostructured and nanocomposite materials
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Micro- and nanomechanics of dislocation defects in thin film materials of electronics and optoelectronics
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Theoretical foundations of modern optoelectronic devices
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Features of the PhD program
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Interactions with research centers in Germany (Technical University Bergakademie Freiberg, European X-ray Free Electron Laser, Hamburg), Finland (Aalto University), Estonia (Tallinn University of Technology), USA (University of California Santa Barbara, University of Virginia) |
List of the supervisor’s research projects (participation/supervision) |
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Theory of structural defects in nanoobjects and nanomaterials, grant № 19-19-00617, Russian Science Foundation – project leader
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Investigation of fundamental processes of generation and detection of single photons, project № 2019-1442, Ministry of Science and Higher Education of the Russian Federation - project participant
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Development of technology and technological equipment for the manufacture of active components of photonic integrated circuits on the InP platform, The National Technology Initiative - project participant
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List of potential thesis topics |
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Micro- and nanomechanics in solids
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Theory of defects in functional materials
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Dislocations in wide bandgap semiconductors
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Modeling of electronic and optoelectronic devices
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Computer materials science
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Publications in the last five years |
75 (Scopus / Web of Science) |
Key publications |
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Romanov A.E., Kolesnikova A. Micromechanics of defects in functional materials // Acta Mechanica - 2021, Vol. 232, No. 5, pp. 1901-1915
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Romanov A.E., Kolesnikova A.L., Gutkin M.Y. Elasticity of a cylinder with axially varying dilatational eigenstrain // International journal of Solids and Structures - 2021, Vol. 213, pp. 121-134
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Kolesnikova A., Rozhkov M.A., Abramenko N.D., Romanov A.E. On mesoscopic description of interfaces in graphene // Physics of Complex Systems - 2020, Vol. 1, No. 4, pp. 129-134
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Chernakov A.P., Kolesnikova A.L., Gutkin M.Y., Romanov A.E. Periodic array of misfit dis-location loops and stress relaxation in core-shell nanowires // International Journal of Engi-neering Science - 2020, Vol. 156, pp. 103367
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Romanov A.E., Kolesnikova A., Yasnikov I.S., Vikarchuk A.A., Dorogov M.V., Priezzheva A.N., Dorogin L.M., Aifantis E.C. Relaxation phenomena in disclinated microcrystals // Re-views on Advanced Materials Science - 2017, Vol. 48, No. 2, pp. 170-178
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Key IPs |
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Semiconductor substrate, semiconductor device and method of manufacturing a semiconductor substrate, M.A. Odnoblyudov, V.E. Bougrov, A.E. Romanov, T. Lang, Russian Federation patent RU2368030, priority 14.12.2004, granted 20.09.2009
1.1. Semiconductor substrate, semiconductor device and method of manufacturing a semiconductor substrate, M.A. Odnoblyudov, V.E. Bougrov, A.E. Romanov, T. Lang, China patent ZL 2005 8 0042970.7, priority 19.05.2005, granted 13.05.2009
1.2. Semiconductor substrate, semiconductor device and method of manufacturing a semiconductor substrate, M.A. Odnoblyudov, V.E. Bougrov, A.E. Romanov, T. Lang, Hong Kong patent HK1111264, priority 19.05.2005, granted 31.12.2009
1.3. Semiconductor substrate, semiconductor device and method of manufacturing a semiconductor substrate, M.A. Odnoblyudov, V.E. Bougrov, A.E. Romanov, T. Lang, R Korea patent № 10-1159156, priority 19.05.2005, granted 18.06.2012
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A method for reducing internal mechanical stresses in a semiconductor structure and a low mechanical stress semiconductor structure, M.A. Odnoblyudov, V.E. Bougrov, A.E. Romanov, Patent of Finland 20095937 No 123319, priority 10.09.2009, granted 28.02.2013
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A heat sink module for led light sources, E.V. Gubernatorov, I.N. Ivukin, V.E. Bougrov, A.R. Kovsh, M.A. Odnoblyudov, A.E. Romanov, Russian Federation utility model patent 2013146214, priority 17.10.2013, granted 14.03.2014
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Device for growing profiled β-Ga2O3 monocrystals, V/I/ Nikolaev, V.M. Krymov, V.N. Maslov, V.E. Bougrov, A.E. Romanov, P.S. Shirshnev, Russian Federation utility model patent 2016134366, priority 22.08.2016, granted 18.04.2017
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Transparent conductive oxide, T.G. Lyashenro, E.V. Shirshneva-Vaschenko, V.E. Bougrov, A.E. Romanov, P.S. Shirshnev, Russian Federation patent 2017146493, priority 27.12.2017, granted 30.10.2018
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Supervisor’s specific requirements |
Solid mathematical background
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Code of the subject area of the PhD program |
01.06.01 Mathematics and mechanics
Specialization: Mechanics of a deformable solid
03.06.01 Physics and astronomy
Specialization: Condensed-matter physics
Specialization: Physics of semiconductors
12.06.01 Photonics, instrumentation, optical and biotechnical systems and technologies
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