ROMANOV, Aleksei E.
Doctor of Science at Institute of Strength Physics and Materials Science of Siberian Branch Russian Academy of Sciences (ISPMS SB RAS); 1989
Research interests
  • Micro- and nanomechanics of disclinations in solids
  • Mesoscopic models of plastic deformation and fracture
  • Physical and mechanical properties of amorphous, nanostructured and nanocomposite materials
  • Micro- and nanomechanics of dislocation defects in thin film materials of electronics and optoelectronics
  • Theoretical foundations of modern optoelectronic devices

Features of the PhD program

Interactions with research centers in Germany (Technical University Bergakademie Freiberg, European X-ray Free Electron Laser, Hamburg), Finland (Aalto University), Estonia (Tallinn University of Technology), USA (University of California Santa Barbara, University of Virginia)
List of the supervisor’s research projects (participation/supervision)
  • Theory of structural defects in nanoobjects and nanomaterials, grant № 19-19-00617, Russian Science Foundation – project leader
  • Investigation of fundamental processes of generation and detection of single photons, project № 2019-1442, Ministry of Science and Higher Education of the Russian Federation - project participant
  • Development of technology and technological equipment for the manufacture of active components of photonic integrated circuits on the InP platform, The National Technology Initiative - project participant
List of potential thesis topics
  • Micro- and nanomechanics in solids
  • Theory of defects in functional materials
  • Dislocations in wide bandgap semiconductors
  • Modeling of electronic and optoelectronic devices
  • Computer materials science
Publications in the last five years 75 (Scopus / Web of Science)
Key publications
  1. Romanov A.E., Kolesnikova A. Micromechanics of defects in functional materials // Acta Mechanica - 2021, Vol. 232, No. 5, pp. 1901-1915
  2. Romanov A.E., Kolesnikova A.L., Gutkin M.Y. Elasticity of a cylinder with axially varying dilatational eigenstrain // International journal of Solids and Structures - 2021, Vol. 213, pp. 121-134
  3. Kolesnikova A., Rozhkov M.A., Abramenko N.D., Romanov A.E. On mesoscopic description of interfaces in graphene // Physics of Complex Systems - 2020, Vol. 1, No. 4, pp. 129-134
  4. Chernakov A.P., Kolesnikova A.L., Gutkin M.Y., Romanov A.E. Periodic array of misfit dis-location loops and stress relaxation in core-shell nanowires // International Journal of Engi-neering Science - 2020, Vol. 156, pp. 103367
  5. Romanov A.E., Kolesnikova A., Yasnikov I.S., Vikarchuk A.A., Dorogov M.V., Priezzheva A.N., Dorogin L.M., Aifantis E.C. Relaxation phenomena in disclinated microcrystals // Re-views on Advanced Materials Science - 2017, Vol. 48, No. 2, pp. 170-178
Key IPs
  1. Semiconductor substrate, semiconductor device and method of manufacturing a semiconductor substrate, M.A. Odnoblyudov, V.E. Bougrov, A.E. Romanov, T. Lang, Russian Federation patent RU2368030, priority 14.12.2004, granted 20.09.2009
       1.1. Semiconductor substrate, semiconductor device and method of manufacturing a semiconductor substrate, M.A. Odnoblyudov, V.E. Bougrov, A.E. Romanov, T. Lang, China patent ZL 2005 8 0042970.7, priority 19.05.2005, granted 13.05.2009
       1.2. Semiconductor substrate, semiconductor device and method of manufacturing a semiconductor substrate, M.A. Odnoblyudov, V.E. Bougrov, A.E. Romanov, T. Lang, Hong Kong patent HK1111264, priority 19.05.2005, granted 31.12.2009 
       1.3. Semiconductor substrate, semiconductor device and method of manufacturing a semiconductor substrate, M.A. Odnoblyudov, V.E. Bougrov, A.E. Romanov, T. Lang, R Korea patent № 10-1159156, priority 19.05.2005, granted 18.06.2012
  2. A method for reducing internal mechanical stresses in a semiconductor structure and a low mechanical stress semiconductor structure, M.A. Odnoblyudov, V.E. Bougrov, A.E. Romanov, Patent of Finland 20095937 No 123319, priority 10.09.2009, granted 28.02.2013
  3. A heat sink module for led light sources, E.V. Gubernatorov,  I.N. Ivukin, V.E. Bougrov, A.R. Kovsh, M.A. Odnoblyudov, A.E. Romanov, Russian Federation utility model patent 2013146214, priority 17.10.2013, granted 14.03.2014
  4. Device for growing profiled β-Ga2O3 monocrystals, V/I/ Nikolaev, V.M. Krymov, V.N. Maslov, V.E. Bougrov, A.E. Romanov, P.S. Shirshnev, Russian Federation utility model patent 2016134366, priority 22.08.2016, granted 18.04.2017
  5. Transparent conductive oxide, T.G. Lyashenro, E.V. Shirshneva-Vaschenko, V.E. Bougrov, A.E. Romanov, P.S. Shirshnev, Russian Federation patent 2017146493, priority 27.12.2017, granted 30.10.2018
Supervisor’s specific requirements

Solid mathematical background

Code of the subject area of the PhD program
01.06.01 Mathematics and mechanics
Specialization: Mechanics of a deformable solid
 
03.06.01 Physics and astronomy
Specialization: Condensed-matter physics
Specialization: Physics of semiconductors
 
12.06.01 Photonics, instrumentation, optical and biotechnical systems and technologies